s m d ty p e i c w w w . k e x i n . c o m . c n 1 s m d ty p e mosfet 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1 . g a t e 2 . s ou r c e 3 . d r a i n f e a tu r e s v d s ( v ) = - 3 0 v i d = - 4 . 1 a r d s ( o n ) 5 2 m ( v g s = - 1 0 v ) r d s ( o n ) 8 7 m ( v g s = - 4 . 5 v ) a b s o l u t e m a x i m u m ra t i n g s t a = 2 5 p - ch an n el e n h an cem en t m osf et g d s p ar am eter s y m bol rati ng uni t dr ai n- s our c e v ol tage v d s - 30 g ate- s our c e v ol tage v g s 20 conti nuous dr ai n cur r ent t a = 25 - 4.1 t a = 70 - 3.5 p ul s ed dr ai n cur r ent i d m - 20 p ow er di s s i pati on t a = 25 1.4 t a = 70 1 t her m al res i s tanc e.j unc ti on- to- a m bi ent t 10s 90 s teady s tate 125 t her m al res i s tanc e.j unc ti on- to- lead r t h jl 60 j unc ti on t em per atur e t j 150 s tor age t em per atur e range t st g - 55 to 150 i d p d w r t h ja v /w a ao 3 4 0 7 ( k o 3 4 0 7 )
w w w . k e x i n . c o m . c n 2 s m d ty p e i c s m d ty p e mosfet e l e c t r i c a l c h a r a c t e r i s ti c s t a = 2 5 m a r k i n g m a r k i n g a 7* ao 3 4 0 7 ( k o 3 4 0 7 ) p - ch an n el e n h an cem en t m osf et p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = - 250 a , v g s = 0v - 30 v v d s = - 24v , v g s = 0v - 1 v d s = - 24v , v g s = 0v , t j = 55 - 5 g ate- b ody l eak age c ur r ent i g s s v d s = 0v , v g s = 20v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s i d = - 250 a - 1 - 1.8 - 3 v v g s = - 10v , i d = - 4.1a 40.5 52 v g s = - 10v , i d = - 4.a t j = 125 57 73 v g s = - 4.5v , i d = - 3a 64 87 o n s tate dr ai n c ur r ent i d ( o n ) v g s = - 4.5v , v d s = - 5v - 10 a f or w ar d t r ans c onduc tanc e g fs v d s = - 5v , i d = - 4a 5.5 8.2 s input capac i tanc e c i ss 700 o utput capac i tanc e c o ss 120 rev er s e t r ans fer capac i tanc e c r ss 75 g ate r es i s tanc e r g v g s = 0v , v d s = 0v , f= 1m hz 10 t otal g ate char ge q g 14.3 g ate s our c e char ge q g s 7 g ate dr ai n char ge q g d 3.1 t ur n- o n del ay t i m e t d ( o n ) 8.6 t ur n- o n ri s e t i m e t r 5 t ur n- o ff del ay t i m e t d ( o f f ) 28.2 t ur n- o ff f al l t i m e t f 13.5 b ody di ode rev er s e rec ov er y t i m e t r r 27 b ody di ode re v er s e rec ov er y char ge q r r 15 nc m ax i m um b ody - di ode conti nuous cur r ent i s - 2.2 a di ode f or w ar d v ol tage v s d i s = - 1a ,v g s = 0v - 0.77 - 1 v v g s = 0v , v d s = - 15v , f= 1m hz v g s = - 4.5v , v d s = - 15v , i d = - 4a i f = - 4a , d i /d t = 100a / s pf nc ns z er o g ate v ol tage dr ai n cur r ent i d s s a m v g s = - 10v , v d s = - 15v , r l = 3.6 ,r g e n = 3 r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t p - ch an n el e n h an cem en t m osf et ty pic al c har ac t er is it ic s 0 5 10 15 20 0.00 1.00 2.00 3.00 4.00 5.00 -v ds (volts) figure 1: on-region characteristics - i d ( a ) v gs =-3v -3.5v -4v -10v -4.5v -5v 0 2 4 6 8 10 0 1 2 3 4 -v gs (volts) figure 2: transfer characteristics - i d ( a ) 25c 125c v ds =-5v 20 40 60 80 100 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r d s(o n ) ( m ? ) v gs =-4.5v v gs =-10v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics - i s ( a ) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature n o r m a l i ze d o n - r e s i s t a n c e v gs =-10v v gs =-4.5v 20 40 60 80 100 120 140 160 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r d s(o n ) ( m ? ) i d =-2a 25c 125c i d =-2a ao 3 4 0 7 ( k o 3 4 0 7 ) ( ? )
s m d ty p e w w w . k e x i n . c o m . c n 4 m os f e t . p - ch an n el e n h an cem en t m osf et ty pic al c har ac t er is it ic s 0 2 4 6 8 10 0 4 8 12 16 -q g (nc) figure 7: gate-charge characteristics - v g s ( v o l t s ) 0 200 400 600 800 1000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics c a p a c i t a n c e ( p f ) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) p o w e r ( w ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z j a n o r m a l i ze d t r a n s i e n t t h e r m a l r e s i s t a n c e 0.1 1 10 100 0.1 1 10 100 -v ds (volts) - i d ( a m p s ) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0 .1 s 1 s 1 0s d c r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-4a single pulse d=t o n / t t j,pk =t a +p dm .z ja .r ja r ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s ao 3 4 0 7 ( k o 3 4 0 7 )
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